This is a correction (erratum) to the research article "Robust epitaxy of single-crystal transition-metal dichalcogenides on lanthanum-passivated sapphire" by X. The erratum was published in Science, Volume 390, Issue 6779, December 2025[3][4][6][7]. The publication date of the erratum is December 18, 2025[4][6]. The correction refers to the original article published in Science (Volume 390, Issue 6771) on October 23, 2025[1][4]. The original article describes the epitaxy of single-layer single-crystal TMDC materials on a lanthanum-passivated sapphire substrate of 150 mm in size[1]. Single-layer lanthanum reduces the surface symmetry and increases the energy difference between antiparallel domains by up to 200 times, leading to unidirectional alignment of the domains[1]. Single crystalline MoS₂, MoSe₂, WS₂ and WSe₂ were grown by CVD and MOCVD methods with an average carrier mobility of 110 cm²/V-s for MoS₂ and 131 cm²/V-s for WSe₂ at room temperature[1].