Scientists have developed an oxy-metal-organic chemical vapor deposition (oxy-MOCVD) method to kinetically accelerate the growth of MoS2.[4] This technique enables faster growth of two-dimensional MoS2 in a deep kinetic regime.[1] It uses oxygen as a mediator for the topological growth of MoS2 with high shape symmetry.[4] Kinetic analysis showed that oxygen-assisted adate attachment has the highest rate of all processes.[4] The method achieves previously unimaginable high-index facets and unusual highly symmetrical shapes of MoS2 flakes.[1] Growth occurs via a novel VLAS mechanism where the catalyst captures molecules from the vapor and allows supersaturated diffusion of the adate along the edges.[1] This approach brings advantages for the development of 2D materials with controlled shapes.[1]